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Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

1998-09-30
F. Della Sala, A. Di Carlo, P. Lugli (INFM-U Roma2), F. Bernardini (INFM-U Cagliari), V. Fiorentini (INFM-U Cagliari, WSI Munich), R. Scholz (TU Chemnitz)J.-M. Jancu (Pisa)

Abstract

The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a ``field-free’’ band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue-shifts for increasing excitation levels.

Abstract (translated by Google)
URL

https://arxiv.org/abs/cond-mat/9809409

PDF

https://arxiv.org/pdf/cond-mat/9809409


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