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Exciton/free-carrier plasma in GaN-based quantum wells: Scattering and screening

2001-11-20
M. E. Portnoi, I. Galbraith

Abstract

The degree of ionisation of a two-dimensional electron-hole plasma is calculated in the low-density (Boltzmann) limit. The electron-hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free-carrier plasma in GaN-based quantum wells at room temperature.

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URL

https://arxiv.org/abs/cond-mat/0111390

PDF

https://arxiv.org/pdf/cond-mat/0111390


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