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Electron Scattering in AlGaN/GaN Structures

2003-12-24
S.Syed, M.J.Manfra, Y.J.Wang, R.J.Molnar, H.L.Stormer

Abstract

We present data on mobility lifetime, τt, quantum lifetime, τq, and cyclotron resonance lifetime, τCR, of a sequence of high-mobility two-dimensional electron gases in the AlGaN/GaN system, covering a density range of 14.5×1012cm2. We observe a large discrepancy between τq and τCR (τqτCR/6) and explain it as the result of density fluctuations of only a few percent. Therefore, only τCR –and not τq – is a reliable measure of the time between electron scattering events in these specimens. The ratio τt/τCR increases with increasing density in this series of samples, but scattering over this density range remains predominantly in the large-angle scattering regime.

Abstract (translated by Google)
URL

https://arxiv.org/abs/cond-mat/0312638

PDF

https://arxiv.org/pdf/cond-mat/0312638


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