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Demonstration of Rashba spin splitting in GaN-based heterostructures

2005-09-08
W. Weber, S.D. Ganichev, Z.D. Kvon, V.V. Bel'kov, L.E. Golub, S.N. Danilov, D. Weiss, W. Prettl, Hyun-Ick Cho, Jung-Hee Lee

Abstract

The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.

Abstract (translated by Google)
URL

https://arxiv.org/abs/cond-mat/0509208

PDF

https://arxiv.org/pdf/cond-mat/0509208


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