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Enhanced spin-orbit scattering length in narrow Al_xGa_{1-x}N/GaN wires

2007-07-28
P. Lehnen, Th. Schapers, N. Kaluza, N. Thillosen, H. Hardtdegen

Abstract

The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear Shubnikov–de Haas oscillations are observed. We find that the electron concentration and mobility is approximately the same for all wires, confirming that the electron gas in the AlGaN/GaN heterostructure is not deteriorated by the fabrication procedure of the wire structures. For the wider quantum wires the weak antilocalization effect is clearly observed, indicating the presence of spin-orbit coupling. For narrow quantum wires with an effective electrical width below 250 nm the weak antilocalization effect is suppressed. By comparing the experimental data to a theoretical model for quasi one-dimensional structures we come to the conclusion that the spin-orbit scattering length is enhanced in narrow wires.

Abstract (translated by Google)
URL

https://arxiv.org/abs/0704.3146

PDF

https://arxiv.org/pdf/0704.3146


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