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Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

2008-05-07
W. Weber, L. E.Golub, S. N. Danilov, J. Karch, C. Reitmaier, B. Wittmann, V. V. Bel'kov, E. L. Ivchenko, Z. D. Kvon, N. Q. Vinh, A. F. G. van der Meer, B. Murdin, S. D. Ganichev

Abstract

Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.

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URL

https://arxiv.org/abs/0804.0342

PDF

https://arxiv.org/pdf/0804.0342


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