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Photoluminescence from surface GaN/AlGaN quantum wells: Effect of the surface states

2010-01-30
Y. D. Glinka, T. V. Shahbazyan, H. O. Everitt, J. F. Muth, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Abstract

We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW’s) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW’s of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.

Abstract (translated by Google)
URL

https://arxiv.org/abs/0905.1972

PDF

https://arxiv.org/pdf/0905.1972


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