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Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

2017-10-26
John T. Gaskins (1), George Kotsonis (2), Ashutosh Giri (1), Christopher T. Shelton (2), Edward Sachet (2), Zhe Cheng (3), Brian M. Foley (3), Zeyu Liu (4), Shenghong Ju (5 and 6), Junichiro (5 and 6), Mark S. Goorsky (7), Samuel Graham (3 and 8), Tengfei Luo (4 and 9), Asegun Henry (3, 8, and 10), Jon-Paul Maria (2), Patrick E. Hopkins (1, 11, and 12) ((1) Department of Mechanical and Aerospace Engineering, University of Virginia, (2) Department of Materials Science and Engineering, North Carolina State University, (3) George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, (4) Department of Aerospace and Mechanical Engineering, Notre Dame, (5) Department of Mechanical Engineering, The University of Tokyo, (6) Center for Materials Research by Information Integration, National Institute for Materials Science, (7) Department of Materials Science and Engineering, University of California, (8) School of Materials Science and Engineering, Georgia Institute of Technology, (9) Center for Sustainable Energy of Notre Dame (ND Energy), Notre Dame, (10) Heat Lab, Georgia Institute of Technology, (11) Department of Materials Science and Engineering, University of Virginia, (12) Department of Physics, University of Virginia)

Abstract

We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green’s function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the “vibrational mismatch” concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.

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URL

https://arxiv.org/abs/1710.09525

PDF

https://arxiv.org/pdf/1710.09525


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