Abstract
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated Laser Slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 $\mu$m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the Laser Slicing lift-off was demonstrated.
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URL
https://arxiv.org/abs/1902.06348