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Laser slicing: a thin film lift-off method for GaN-on-GaN technology

2019-03-29
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov, Andrey Zubrilov, Viktor Kogotkov, Philipp Latyshev, Yuri Lelikov, Andrey Leonidov, Yuri Shreter

Abstract

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 $\mu$m and an InGaN LED epitaxial device structure was lifted off a GaN substrate and transferred onto a copper substrate. The electroluminescence of the LED chip after the laser slicing lift-off was demonstrated.

Abstract (translated by Google)
URL

https://arxiv.org/abs/1902.06348

PDF

https://arxiv.org/pdf/1902.06348


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