We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de Haas and Hall measurements. Using optical illumination, we were able to increase the carrier density of the Al0.15Ga0.85N/AlN/GaN sample from 1.6x10^{12} cm^{-2} to 5.9x1012 cm^{-2}, while the electron mobility was enhanced from 9540 cm2/Vs to 21400 cm2/Vs at T = 1.6 K. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength, being highest close to the bandgap and decreasing at longer wavelengths. The PPC effect became fairly weak for illumination wavelengths longer than 530 nm and showed a more complex response with an initial negative photoconductivity in the infrared region of the spectrum (>700 nm). The maximum PPC-efficiency for 390 nm illumination was 0.011% and 0.005% for Al0.25Ga0.75N/AlN/GaN and Al0.15Ga0.85N/AlN/GaN samples, respectively. After illumination, the carrier density could be reduced by annealing the sample. Annealing characteristics of the PPC effect were studied in the 20-280 K temperature range. We found that annealing at 280 K was not sufficient for full recovery of the carrier density. In fact, the PPC effect occurs in these samples even at room temperature. Comparing the measurement results of two samples, the Al0.25Ga0.75N/AlN/GaN sample had a larger response to illumination and displayed a smaller recovery with thermal annealing. This result suggests that the energy scales of the defect configuration-coordinate diagrams for these samples are different, depending on their Al-composition.
https://arxiv.org/abs/cond-mat/0608274
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wavevector with an effective linear spin-orbit coupling parameter 5.5x10^{-13} eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.
https://arxiv.org/abs/cond-mat/0608254
Black-hole (BH) binaries with single-BH masses m=5–20 Msun, moving on quasicircular orbits, are among the most promising sources for first-generation ground-based gravitational-wave (GW) detectors. Until now, the development of data-analysis techniques to detect GWs from these sources has been focused mostly on nonspinning BHs. The data-analysis problem for the spinning case is complicated by the necessity to model the precession-induced modulations of the GW signal, and by the large number of parameters needed to characterize the system, including the initial directions of the spins, and the position and orientation of the binary with respect to the GW detector. In this paper we consider binaries of maximally spinning BHs, and we work in the adiabatic-inspiral regime to build families of modulated detection templates that (i) are functions of very few physical and phenomenological parameters, (ii) model remarkably well the dynamical and precessional effects on the GW signal, with fitting factors on average >~ 0.97, but (iii) might require increasing the detection thresholds, offsetting at least partially the gains in the fitting factors. Our detection-template families are quite promising also for the case of neutron-star–black-hole binaries, with fitting factors on average ~ 0.93. For these binaries we also suggest (but do not test) a further template family, which would produce essentially exact waveforms written directly in terms of the physical spin parameters.
https://arxiv.org/abs/gr-qc/0211087
The image is a very important mean of communication in the field of architectural who intervenes in the various phases of the design of a project. It can be regarded as a tool of decision-making aid. The study of our research aims at to see the contribution of the Economic Intelligence in the resolution of a decisional problem of the various partners (Architect, Contractor, Customer) in the architectural field, in order to make strategic decisions within the framework of the realization or design of an architectural work. The economic Intelligence allows the taking into account of the real needs for the user-decision makers, so that their waiting are considered at the first stage of a search for information and not in the final stage of the development of the tool in the evaluation of this last.
https://arxiv.org/abs/cs/0607081
The hippocampus has the capacity for reactivating recently acquired memories [1-3] and it is hypothesized that one of the functions of sleep reactivation is the facilitation of consolidation of novel memory traces [4-11]. The dynamic and network processes underlying such a reactivation remain, however, unknown. We show that such a reactivation characterized by local, self-sustained activity of a network region may be an inherent property of the recurrent excitatory-inhibitory network with a heterogeneous structure. The entry into the reactivation phase is mediated through a physiologically feasible regulation of global excitability and external input sources, while the reactivated component of the network is formed through induced network heterogeneities during learning. We show that structural changes needed for robust reactivation of a given network region are well within known physiological parameters [12,13].
https://arxiv.org/abs/q-bio/0607022
EF Eri is a magnetic cataclysmic variable that has been in a low accretion state for the past nine years. Low state optical spectra reveal the underlying Zeeman-split white dwarf absorption lines. These features are used to determine a value of 13-14 MG as the white dwarf field strength. Recently, 5-7 years into the low state, Balmer and other emission lines have appeared in the optical. An analysis of the H$\alpha$ emission line yields the first radial velocity solution for EF Eri, leading to a spectroscopic ephemeris for the binary and, using the best available white dwarf mass of 0.6M${\odot}$, a mass estimate for the secondary of 0.055M${\odot}$. For a white dwarf mass of 0.95M${\odot}$, the average for magnetic white dwarfs, the secondary mass increases to 0.087M${\odot}$. At EF Eri’s orbital period of 81 minutes, this higher mass secondary could not be a normal star and still fit within the Roche lobe. The source of the Balmer and other emission lines is confirmed to be from the sub-stellar secondary and we argue that it is due to stellar activity. We compare EF Eri’s emission line spectrum and activity behavior to that recently observed in AM Her and VV Pup and attributed to stellar activity. We explore observations and models originally developed for V471 Tau, for the RS CVn binaries, and for extra-solar planets. We conclude that irradiation of the secondary in EF Eri and similar systems is unlikely and, in polars, the magnetic field interaction between the two stars (with a possible tidal component) is a probable mechanism which would concentrate chromospheric activity on the secondary near the sub-stellar point of the white dwarf.
https://arxiv.org/abs/astro-ph/0607140
HITS adapted algorithm for synonym search, the program architecture, and the program work evaluation with test examples are presented in the paper. Synarcher program for synonym (and related terms) search in the text corpus of special structure (Wikipedia) was developed. The results of search are presented in the form of a graph. It is possible to explore the graph and search graph elements interactively. The proposed algorithm could be applied to the search request extending and for synonym dictionary forming.
https://arxiv.org/abs/cs/0606128
The program Synarcher for synonym (and related terms) search in the text corpus of special structure (Wikipedia) was developed. The results of the search are presented in the form of graph. It is possible to explore the graph and search for graph elements interactively. Adapted HITS algorithm for synonym search, program architecture, and program work evaluation with test examples are presented in the paper. The proposed algorithm can be applied to a query expansion by synonyms (in a search engine) and a synonym dictionary forming.
https://arxiv.org/abs/cs/0606097
A gauge model of neural network is introduced, which resembles the Z(2) Higgs lattice gauge theory of high-energy physics. It contains a neuron variable $S_x = \pm 1$ on each site $x$ of a 3D lattice and a synaptic-connection variable $J_{x\mu} = \pm 1$ on each link $(x,x+\hat{\mu}) (\mu=1,2,3)$. The model is regarded as a generalization of the Hopfield model of associative memory to a model of learning by converting the synaptic weight between $x$ and $x+\hat{\mu}$ to a dynamical Z(2) gauge variable $J_{x\mu}$. The local Z(2) gauge symmetry is inherited from the Hopfield model and assures us the locality of time evolutions of $S_x$ and $J_{x\mu}$ and a generalized Hebbian learning rule. At finite “temperatures”, numerical simulations show that the model exhibits the Higgs, confinement, and Coulomb phases. We simulate dynamical processes of learning a pattern of $S_x$ and recalling it, and classify the parameter space according to the performance. At some parameter regions, stable column-layer structures in signal propagations are spontaneously generated. Mutual interactions between $S_x$ and $J_{x\mu}$ induce partial memory loss as expected.
https://arxiv.org/abs/cond-mat/0203136
A synfire chain is a network that can generate repeated spike patterns with millisecond precision. Although synfire chains with only one activity propagation mode have been intensively analyzed with several neuron models, those with several stable propagation modes have not been thoroughly investigated. By using the leaky integrate-and-fire neuron model, we constructed a layered associative network embedded with memory patterns. We analyzed the network dynamics with the Fokker-Planck equation. First, we addressed the stability of one memory pattern as a propagating spike volley. We showed that memory patterns propagate as pulse packets. Second, we investigated the activity when we activated two different memory patterns. Simultaneous activation of two memory patterns with the same strength led the propagating pattern to a mixed state. In contrast, when the activations had different strengths, the pulse packet converged to a two-peak state. Finally, we studied the effect of the preceding pulse packet on the following pulse packet. The following pulse packet was modified from its original activated memory pattern, and it converged to a two-peak state, mixed state or non-spike state depending on the time interval.
https://arxiv.org/abs/q-bio/0605022
We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainly due to the Bychkov-Rashba mechanism. In addition, we have derived a closed-form expression for the magnetoconductivity, allowing us to extract reliable transport parameters for our devices. The Rashba spin-orbit coupling constant is $\alpha_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while the conduction band spin-orbit splitting energy amounts to $\Delta_{so}$ $\sim$ 0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.
https://arxiv.org/abs/cond-mat/0605155
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped GaN film.
https://arxiv.org/abs/cond-mat/0604647
We present the design and implementation of the Japanese Virtual Observatory (JVO) system. JVO is a portal site to various kinds of astronomical resources distributed all over the world. We have developed five components for constructing the portal: (1) registry, (2) data service, (3) workflow system, (4) data analysis service (5) portal GUI. Registry services are used for publishing and searching data services in the VO, and they are constructed using an OAI-PMH metadata harvesting protocol and a SOAP web service protocol so that VO standard architecture is applied. Data services are developed based on the Astronomical Data Query Language (ADQL) which is an international VO standard and an extension of the standard SQL. The toolkit for building the ADQL-based service is released to the public on the JVO web site. The toolkit also provides the protocol translation from a Simple Image Access Protocol (SIAP) to ADQL protocol, so that both the VO standard service can be constructed using our toolkit. In order to federate the distributed databases and analysis services, we have designed a workflow language which is described in XML and developed execution system of the workflow. We have succeeded to connect to a hundred of data resources of the world as of April 2006. We have applied this system to the study of QSO environment by federating a QSO database, a Subaru Suprim-Cam database, and some analysis services such a SExtractor and HyperZ web services. These experiences are described is this paper.
https://arxiv.org/abs/astro-ph/0604593
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of optoelectronic devices have been limited. The current first-principles calculation for the electronic structures of nm-scale [0001] GaN films show that the internal electric fields and the band tilt of these films are in opposite direction to those predicted by PBFV. Additionally, it is determined that an intrinsic self-regulated charge transfer across the film limits the electrostatic potential difference across the film, which renders the local conduction band energy minimum (at the Ga-terminated surface) approximately equal to the local valence band energy maximum (at the N-terminated surface). This effect is found to occur in films thicker than ~4nm.
https://arxiv.org/abs/cond-mat/0604366
We report on lattice specific heat of bulk hexagonal GaN measured by the heat flow method in the temperature range 20-300 K and by the adiabatic method in the range 5-70 K. We fit the experimental data using two temperatures model. The best fit with the accuracy of 3 % was obtained for the temperature independent Debye’s temperature $\theta_{\rm D}=365$ {\rm K} and Einstein’s temperature $\theta_{\rm E}=880$ {\rm K}. We relate these temperatures to the function of density of states. Using our results for heat conduction coefficient, we established in temperature range 10-100 K the explicit dependence of the phonon mean free path on temperature $\it{l}{\rm ph}\propto T^{-2}$. Above 100 K, there is the evidence of contribution of the Umklapp processes which limit phonon free path at high temepratures. For phonons with energy $k{\rm B}\times 300 $ {\rm K} the mean free path is of the order 100 {\rm nm}
https://arxiv.org/abs/cond-mat/0604270
We present an experimental investigation of band-gap shrinkage in n-type GaN using photoluminescence spectroscopy, as a function of electron concentration and temperature. The observed systematic shift of the band-to-band transition energy to lower energies with increasing electron concentration has been interpreted as many-body effects due to exchange and correlation among majority and minority carriers. The band-to-band transition energy also shifts to lower energy with increasing temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy are evaluated using different models and we find that the semi-empirical relation based on phonon-dispersion related spectral function leads to excellent fit to the experimental data.
https://arxiv.org/abs/cond-mat/0604221
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ –> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures.
https://arxiv.org/abs/cond-mat/0603288
The NSDL (National Science Digital Library) is funded by the National Science Foundation to advance science and match education. The inital product was a metadata-based digital library providing search and access to distributed resources. Our recent work recognizes the importance of context - relations, metadata, annotations - for the pedagogical value of a digital library. This new architecture uses Fedora, a tool for representing complex content, data, metadata, web-based services, and semantic relationships, as the basis of an information network overlay (INO). The INO provides an extensible knowl-edge base for an expanding suite of digital library services.
https://arxiv.org/abs/cs/0603024
We have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our calculated results that the most stable structure for the 1ML-GaN on the O-polarity ZnO(000-1) interface has the N-polarity. However, we have found that the results of the adatom dynamics on the O-terminated ZnO(000-1) surface shows the Ga-polarity. We find that the key to change the polarity of GaN crystal grown on the O-terminated ZnO(000-1) surface is the growth temperature. We have suggested that the optimized initial growth condition for the growth of the Ga-polarity GaN crystal on the O-terminated ZnO(000-1) surface is under the suitable low temperature and the stoichiometric growth condition. Experimental observations show that GaN grown on ZnO(000-1) by PLD at substrate temperatures below 300C has Ga-polarity, which is quite consistent with the theoretical calculations
https://arxiv.org/abs/cond-mat/0603095
A novel lattice coding framework is proposed for outage-limited cooperative channels. This framework provides practical implementations for the optimal cooperation protocols proposed by Azarian et al. In particular, for the relay channel we implement a variant of the dynamic decode and forward protocol, which uses orthogonal constellations to reduce the channel seen by the destination to a single-input single-output time-selective one, while inheriting the same diversity-multiplexing tradeoff. This simplification allows for building the receiver using traditional belief propagation or tree search architectures. Our framework also generalizes the coding scheme of Yang and Belfiore in the context of amplify and forward cooperation. For the cooperative multiple access channel, a tree coding approach, matched to the optimal linear cooperation protocol of Azarain et al, is developed. For this scenario, the MMSE-DFE Fano decoder is shown to enjoy an excellent tradeoff between performance and complexity. Finally, the utility of the proposed schemes is established via a comprehensive simulation study.
https://arxiv.org/abs/cs/0602049
Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysis provides strong evidence that the emission is due to recombination in which electrons both from effective mass donors and from deeper donors recombine with deep centers, the deep centers being vacancy-related defects.
https://arxiv.org/abs/cond-mat/0602104
A galaxy-sized halo may contain a large number of intermediate mass (10^{2-4} solar mass) compact objects (IMCOs), which can be intermediate mass black holes (IMBHs) or the CDM subhalos. We propose to directly detect the IMBHs by observing multiply imaged QSO-galaxy lens systems with a high angular resolution (~ 0.03mas), which would be achieved by the next-VLBI space missions. The silhouette of the IMBHs would appear as an either monopole-like or dipole-like variation at the scale of the Einstein radius against the QSO jets. As a byproduct, we can also directly detect the 10^{4-5} solar mass CDM subhalos. From a measurement of the local distortion in the surface brightness of the QSO jet, we can make a distinction between a point mass (corresponding to an IMBH) and an extended structure (corresponding to a CDM subhalo). It would be a unique probe of the IMCOs whose nature has been under the veil of mistery.
https://arxiv.org/abs/astro-ph/0512648
The investigation of small size embedded nanostructures, by a combination of complementary anomalous diffraction techniques, is reported. GaN Quantum Dots (QDs), grown by molecular beam epitaxy in a modified Stranski-Krastanow mode, are studied in terms of strain and local environment, as a function of the AlN cap layer thickness, by means of grazing incidence anomalous diffraction. That is, the X-ray photons energy is tuned across the Ga absorption K-edge which makes diffraction chemically selective. Measurement of \textit{hkl}-scans, close to the AlN (30-30) Bragg reflection, at several energies across the Ga K-edge, allows the extraction of the Ga partial structure factor, from which the in-plane strain of GaN QDs is deduced. From the fixed-Q energy-dependent diffracted intensity spectra, measured for diffraction-selected iso-strain regions corresponding to the average in-plane strain state of the QDs, quantitative information regarding composition and the out-of-plane strain has been obtained. We recover the in-plane and out-of-plane strains in the dots. The comparison to the biaxial elastic strain in a pseudomorphic layer indicates a tendency to an over-strained regime.
https://arxiv.org/abs/cond-mat/0509016
A new mechanism (DeltaC1-DeltaC3 coupling) is accounted for the spin splitting of wurtzite GaN, which is originated from the intrinsic wurtzite effects (band folding and structure inversion asymmetry). The band-folding effect generates two conduction bands (DeltaC1 and DeltaC3), in which p-wave probability has tremendous change when kz approaches anti-crossing zone. The spin-splitting energy induced by the DeltaC1-DeltaC3 coupling and wurtzite structure inversion asymmetry is much larger than that evaluated by traditional Rashba or Dresselhaus effects. When we apply the coupling to GaN/AlN quantum wells, we find that the spin-splitting energy is sensitively controllable by an electric field. Based on the mechanism, we proposed a p-wave-enhanced spin-polarized field effect transistor, made of InxGa1-xN/InyAl1-yN, for spintronics application.
https://arxiv.org/abs/cond-mat/0510831
A novel detector for multiple-input multiple-output (MIMO) communications is presented. The algorithm belongs to the class of the lattice detectors, i.e. it finds a reduced complexity solution to the problem of finding the closest vector to the received observations. The algorithm achieves optimal maximum-likelihood (ML) performance in case of two transmit antennas, at the same time keeping a complexity much lower than the exhaustive search-based ML detection technique. Also, differently from the state-of-art lattice detector (namely sphere decoder), the proposed algorithm is suitable for a highly parallel hardware architecture and for a reliable bit soft-output information generation, thus making it a promising option for real-time high-data rate transmission.
https://arxiv.org/abs/cs/0508064
With the aim of investigating the possible integration of opto-electronic devices, epitaxial GaN layers have been grown on Si(111) SOI and on Si/CoSi2/Si(111) using metalorganic chemical vapor deposition. The samples are found to possess a highly oriented wurtzite structure, a uniform thickness and abrupt interfaces. The epitaxial orientation is determined as GaN(0001)//Si(111), GaN[1120]//Si[110] and GaN[1010]//Si[112], and the GaN layer is tensily strained in the direction parallel to the interface. According to Rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of GaN on Si(111) SOI is better than that of GaN on silicide. Room-temperature photoluminescence of GaN/SOI reveals a strong near-bandedge emission at 368 nm (3.37 eV) with an FWHM of 59 meV.
https://arxiv.org/abs/cond-mat/0510222
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field behavior along the channel, for fixed applied voltages, is determined by the contacts positions. Anyway, in GaAs based HEMTs, the geometry of the device appears to be not determinant for the output current due to saturation effects. On the other hand, the GaN based technology still offers the possibility to enhance devices output current handling contacts distances. In this paper we will present Monte Carlo simulations results which show how a downscaling of the Source to Gate distance could improve the device performances inducing an higher potential barrier between source and gate.
https://arxiv.org/abs/cond-mat/0510049
In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite crystal structure on an atomistic level. Optical dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for full configuration interaction calculations. We present multi-exciton emission spectra and discuss in detail how Coulomb correlations and oscillator strengths are changed by the piezoelectric fields present in the structure. Vanishing exciton and biexciton ground state emission for small lens-shaped dots is predicted.
https://arxiv.org/abs/cond-mat/0509545
The circular photogalvanic effect (CPGE), induced by infrared radiation, has been observed in (0001)-oriented GaN quantum well (QW) structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin-splitting of the conduction band in k-space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin-splitting, caused by the built-in asymmetry at the AlGaN/GaN interface.
https://arxiv.org/abs/cond-mat/0509208
We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd doping on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This remarkable result can be understood only in terms of a long range induction of magnetic moments in the surrounding GaN matrix by the Gd ions.
https://arxiv.org/abs/cond-mat/0509198
An extended interference pattern close to surface may result in both a transmissive or evanescent surface fields for large area manipulation of trapped particles. The affinity of differing particle sizes to a moving standing wave light pattern allows us to hold and deliver them in a bi-directional manner and importantly demonstrate experimentally particle sorting in the sub-micron region. This is performed without the need of fluid flow (static sorting). Theoretical calculations experimentally confirm that certain sizes of colloidal particles thermally hop more easily between neighboring traps. A new generic method is also presented for particle position detection in an extended periodic light pattern and applied to characterization of optical traps and particle behavior
https://arxiv.org/abs/physics/0509054
In this work, we report on the epitaxial growth of multiferroic YMnO3 on GaN. Both materials are hexagonal with a nominal lattice mismatch of 4%, yet x-ray diffraction reveals an unexpected 30 degree rotation between the unit cells of YMnO3 and GaN that results in a much larger lattice mismatch (10%) compared to the unrotated case. Estimates based on first principles calculations show that the bonding energy gained from the rotated atomic arrangement compensates for the increase in strain energy due to the larger lattice mismatch. Understanding the energy competition between chemical bonding energy and strain energy provides insight into the heteroepitaxial growth mechanisms of complex oxide-semiconductor systems.
https://arxiv.org/abs/cond-mat/0508478
Detection template families (DTFs) are built to capture the essential features of true gravitational waveforms using a small set of phenomenological waveform parameters. Buonanno, Chen, and Vallisneri [Phys. Rev. D 67, 104025 (2003)] proposed the BCV2'' DTF to perform computationally efficient searches for signals from precessing binaries of compact stellar objects. Here we test the signal-matching performance of the BCV2 DTF for asymmetric--mass-ratio binaries, and specifically for double--black-hole binaries with component masses (m1,m2): (6~12Msun, 1~3Msun), and for black-hole--neutron-star binaries with component masses (m1,m2) = (10Msun, 1.4Msun); we take all black holes to be maximally spinning. We find a satisfactory signal-matching performance, with fitting factors averaging between 0.94 and 0.98. We also scope out the region of BCV2 parameters needed for a template-based search, we evaluate the template match metric, we discuss a template-placement strategy, and we estimate the number of templates needed for searches at the LIGO design sensitivity. In addition, after gaining more insight in the dynamics of spin--orbit precession, we propose a modification of the BCV2 DTF that is parametrized by physical (rather than phenomenological) parameters. We test this modifiedBCV2P’’ DTF for the (10Msun, 1.4Msun) black-hole–neutron-star system, finding a signal-matching performance comparable to the BCV2 DTF, and a reliable parameter-estimation capability for target-binary quantities such as the chirp mass and the opening angle (the angle between the black-hole spin and the orbital angular momentum).
https://arxiv.org/abs/gr-qc/0508064
Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence Multi-wavelength Anomalous Di raction (MAD) in both the QDs and the AlN during the progressive coverage of QDs by AlN monolayers. Vertical correlation in the position of the GaN QDs was also studied by both grazing incidence MAD and anomalous Grazing Incidence Small Angle Scattering (GISAXS) as a function of the number of GaN planes and of the AlN spacer thickness. In a regime where the GaN QDs and the AlN capping are mutually strain influenced, a vertical correlation in the position of QDs is found with as a side-e ect an average increase in the QDs width.
https://arxiv.org/abs/cond-mat/0508126
Denial-of-Service (DoS) and Distributed DoS (DDoS) attacks can cause serious problems in wireless networks due to limited network and host resources. Attacker traceback is a promising solution to take a proper countermeasure near the attack origins, to discourage attackers from launching attacks, and for forensics. However, attacker traceback in Mobile Ad-hoc Networks (MANETs) is a challenging problem due to the dynamic topology, and limited network resources. It is especially difficult to trace back attacker(s) when they are moving to avoid traceback. In this paper, we introduce the ATTENTION protocol framework, which pays special attention to MAC layer abnormal activity under attack. ATTENTION consists of three classes, namely, coarse-grained traceback, fine-grained traceback and spatio-temporal fusion architecture. For energy-efficient attacker searching in MANETs, we also utilize small-world model. Our simulation analysis shows 79% of success rate in DoS attacker traceback with coarse-grained attack signature. In addition, with fine-grained attack signature, it shows 97% of success rate in DoS attacker traceback and 83% of success rate in DDoS attacker traceback. We also show that ATTENTION has robustness against node collusion and mobility.
https://arxiv.org/abs/cs/0508010
We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.
https://arxiv.org/abs/cond-mat/0411224
The search for a point set configurations of the R^3 space which contains the smallest value of the Euclidean Steiner Ratio is almost finished. In the present work we introduce some analytical methods which aim to support a famous conjecture of Discrete Mathematics literature. The relations of this problem with that of molecular architecture in terms of motivation as well as application of the formulae obtained is also emphasized.
https://arxiv.org/abs/math-ph/0506050
We have used the VLA to study radio variability among a sample of 18 low luminosity active galactic nuclei (LLAGNs), on time scales of a few hours to 10 days. The goal was to measure or limit the sizes of the LLAGN radio-emitting regions, in order to use the size measurements as input to models of the radio emission mechanisms in LLAGNs. We detect variability on typical time scales of a few days, at a confidence level of 99%, in half of the target galaxies. Either variability that is intrinsic to the radio emitting regions, or that is caused by scintillation in the Galactic interstellar medium, is consistent with the data. For either interpretation, the brightness temperature of the emission is below the inverse-Compton limit for all of our LLAGNs, and has a mean value of about 1E10 K. The variability measurements plus VLBI upper limits imply that the typical angular size of the LLAGN radio cores at 8.5 GHz is 0.2 milliarcseconds, plus or minus a factor of two. The ~ 1E10 K brightness temperature strongly suggests that a population of high-energy nonthermal electrons must be present, in addition to a hypothesized thermal population in an accretion flow, in order to produce the observed radio emission.
https://arxiv.org/abs/astro-ph/0504066
We report on the temperature dependence of the mobility, $\mu$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $\mu_{ac}^{-1} = \alpha$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $\alpha$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.
https://arxiv.org/abs/cond-mat/0503638
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line are evaluated using different models. We find that the semi-empirical relation based on phonon-dispersion related spectral function leads to excellent fit to the experimental data. The exciton-phonon coupling constants are determined from the analysis of linewidth broadening.
https://arxiv.org/abs/cond-mat/0503611
We report on the observation of hot water vapor (steam) in the inner AU of a young massive star located in the star-forming region IRAS 08576-4334. The water lines are detected in a medium resolution (R=10,000) K-band spectrum taken by the infrared spectrometer ISAAC mounted on the VLT-ANTU. The water vapor is at a mean temperature of 1565+/-510 K, cooler than the hot CO found in the same object, which is at 1660K and the column density is N(H2O)=(2.5 +/- 0.4)x1E18 cm-2. The profile of both H2O and CO lines is best reproduced by the emission from a Keplerian disk. To interpret the data, we also investigate the formation of molecules and especially CO and water vapor in the inner hot and dense part of disks around young high mass stars using a pseudo time-dependent gas-phase chemical model. Molecules are rapidly photodissociated but this destruction is compensated by an efficient formation due to fast neutral-neutral reactions. The ability of CO molecules to self-shield significantly enhances its abundance. Water molecules are sufficiently abundant to be detectable. The observed H2O/CO ratio is reproduced by gas at 1600K and an enhanced UV field over gas density ratio I_UV/nH=1E(-4)- 1E(-6). The simulations support the presence of CO and H2O molecules in the inner disks around young massive stars despite the strong UV radiation and show that the OH radical plays an essential role in hot gas chemistry.
https://arxiv.org/abs/astro-ph/0503547
GaN-nanorods grown on Si(111) substrates are found strain- and defect-free as characterized by micro Raman spectroscopy, secondary electron (SE) and cathode-luminescence (CL) imaging. The matrix supporting the nanorods bears the brunt of all strains, strain-relaxations, and defect generations, giving the nanorods an ideal environment to grow to perfection. Photo-excitations by the Raman laser source and electron irradiation during CL imaging lead to an increase of non-equilibrium electrons, suggesting an effective approach to photo-emitting or field emitting device applications. The nanorods, largely isolated from but perfectly aligned with the sustaining matrix, are grown in excellent epitaxy with the Si substrates.
https://arxiv.org/abs/cond-mat/0503195
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal catalysts. The nano-capillary brings within it a huge imbalance in equilibrium partial pressure of Ga relative to the growth ambient. GaN nanorods thus always grow out of a holding nanotrench and conform to the boundaries of surrounding islands. The nanorods are epitaxially orientated with <0001>GaN // <111>Si and <2110>GaN // <110>Si similar to the matrix. Concaved geometry is essential and is a condition that limits the axial dimension of the nanorods protruding above the base (matrix) material region. Revelation of the growth mechanism in the current context suggests that fabrication of nano quantum structures with controlled patterns is enabling for any attainable dimensions
https://arxiv.org/abs/cond-mat/0503194
Qualitatively, some real networks in the brain could be characterized as ‘small worlds’, in the sense that the structure of their connections is intermediate between the extremes of an orderly geometric arrangement and of a geometry-independent random mesh. Small worlds can be defined more precisely in terms of their mean path length and clustering coefficient; but is such a precise description useful to better understand how the type of connectivity affects memory retrieval? We have simulated an autoassociative memory network of integrate-and-fire units, positioned on a ring, with the network connectivity varied parametrically between ordered and random. We find that the network retrieves when the connectivity is close to random, and displays the characteristic behavior of ordered nets (localized ‘bumps’ of activity) when the connectivity is close to ordered. Recent analytical work shows that these two behaviours can coexist in a network of simple threshold-linear units, leading to localized retrieval states. We find that they tend to be mutually exclusive behaviours, however, with our integrate-and-fire units. Moreover, the transition between the two occurs for values of the connectivity parameter which are not simply related to the notion of small worlds.
https://arxiv.org/abs/q-bio/0502003
We present measurements of the second-order coherence function on emission from single GaN quantum dots. In some cases a large degree of photon antibunching is observed, demonstrating isolation of a single quantum system. For a selected quantum dot, we study the dependence of photon antibunching on excitation power and temperature. Using pulsed excitation, we demonstrate an ultraviolet triggered single-photon source operating at a wavelength of 358 nm.
https://arxiv.org/abs/cond-mat/0502013
The D0 experiment at Fermilab’s Tevatron will record several petabytes of data over the next five years in pursuing the goals of understanding nature and searching for the origin of mass. Computing resources required to analyze these data far exceed capabilities of any one institution. Moreover, the widely scattered geographical distribution of D0 collaborators poses further serious difficulties for optimal use of human and computing resources. These difficulties will exacerbate in future high energy physics experiments, like the LHC. The computing grid has long been recognized as a solution to these problems. This technology is being made a more immediate reality to end users in D0 by developing a grid in the D0 Southern Analysis Region (D0SAR), D0SAR-Grid, using all available resources within it and a home-grown local task manager, McFarm. We will present the architecture in which the D0SAR-Grid is implemented, the use of technology and the functionality of the grid, and the experience from operating the grid in simulation, reprocessing and data analyses for a currently running HEP experiment.
https://arxiv.org/abs/physics/0501164
Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one and two phonon sidebands are significantly different. Segall-Mahan theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between theory and experiment is achieved by using only one adjustable parameter (effective mass of free excitons). The obtained effective mass indicates that the free excitons in GaN are likely much lighter than estimated by available theoretical studies.
https://arxiv.org/abs/cond-mat/0501724
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN matrix by Gd is also reflected in the circular polarization of magneto-photoluminescence measurements. Moreover, the materials system is found to be ferromagnetic above room temperature in the entire concentration range under investigation (7$\times10^{15}$ to 2$\times10^{19}$ cm$^{-3}$). We propose a phenomenological model to understand the macroscopic magnetic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd.
https://arxiv.org/abs/cond-mat/0412564
The degenerate four-wave mixing spectroscopy of uniaxially strained GaN layers is demonstrated using colinearly polarized laser pulses. The nonlinear response of FWM signal on exciton oscillator strength enhances the sensitivity for polarized exciton, allowing for mapping out the in-plane anisotropy of the strain field. The observed high-contrast spectral polarization clearly shows fine structure splittings of excitons, which are also confirmed in the change of quantum beating periods of time.
https://arxiv.org/abs/cond-mat/0412559
High-resolution soft X-ray emission and absorption spectra near the N K-edge of wurtzite GaN are presented. The experimental data are interpreted in terms of band structure based full-potential electronic structure calculations. The absorption spectra, compared with calculations including core hole screening, indicate partial core hole screening in the absorption process. The resonant emission spectra demonstrate pronounced dispersions of the spectral structures, identifying effects of momentum conservation due to resonant inelastic X-ray scattering (RIXS) with anisotropic electronic structure of GaN. In view of a wide range of optoelectronic applications of GaN, our findings on the momentum selectivity in RIXS can be utilized in development of GaN based nanoelectronics devices by controlling direct vs indirect band gap character of GaN nanostructures.
https://arxiv.org/abs/cond-mat/0412304